Epitaxial Structure Simulation Study of In 0.53 Ga 0.47 As/AlAs Double-Barrier Resonant Tunnelling Diodes (2022)

Abstract

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Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/iwmts54901.2022.9832441

Publication URI: http://dx.doi.org/10.1109/iwmts54901.2022.9832441

Type: Conference/Paper/Proceeding/Abstract