Influence of Emitter Side Design on the Unintentional Turn-on of 10kV+ SiC n-IGBTs (2022)

First Author: Almpanis I
Attributed to:  Multi-Domain Virtual Prototyping Techniques for Wide-Bandgap Power Electronics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ecce50734.2022.9947492

Publication URI: http://dx.doi.org/10.1109/ecce50734.2022.9947492

Type: Conference/Paper/Proceeding/Abstract