📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! If you would be interested in being interviewed about the improvements we're making and to have your say about how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community, please email gateway@ukri.org.

Influence of Current Collapse due to Vds Bias Effect on GaN-HEMTs Id-Vds Characteristics in Saturation Region (2022)

First Author: Xuyang Lu

Attributed to: Gallium Nitride Smart Power Integrated Circuit Technology (GaN SPICe) funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Publication URI: https://ieeexplore.ieee.org/abstract/document/9907581

Type: Conference/Paper/Proceeding/Abstract