GaN-HEMT on Si as a Robust Visible-Blind UV Detector With High Responsivity (2022)

First Author: Varghese A
Attributed to:  Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/jsen.2022.3170653

Publication URI: http://dx.doi.org/10.1109/jsen.2022.3170653

Type: Journal Article/Review

Parent Publication: IEEE Sensors Journal

Issue: 12