📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! If you would be interested in being interviewed about the improvements we're making and to have your say about how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community, please email gateway@ukri.org.

GaN-HEMT on Si as a Robust Visible-Blind UV Detector With High Responsivity (2022)

First Author: Varghese A

Attributed to: Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/jsen.2022.3170653

Publication URI: http://dx.doi.org/10.1109/jsen.2022.3170653

Type: Journal Article/Review

Parent Publication: IEEE Sensors Journal

Issue: 12