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Miniature Mesa Extension for a Planar Submicron AlGaN/GaN HEMT Gate Formation. (2022)

First Author: Alathbah M

Attributed to: Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.3390/mi13112007

PubMed Identifier: 36422436

Publication URI: http://europepmc.org/abstract/MED/36422436

Type: Journal Article/Review

Volume: 13

Parent Publication: Micromachines

Issue: 11

ISSN: 2072-666X