Miniature Mesa Extension for a Planar Submicron AlGaN/GaN HEMT Gate Formation. (2022)
Attributed to:
Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.3390/mi13112007
PubMed Identifier: 36422436
Publication URI: http://europepmc.org/abstract/MED/36422436
Type: Journal Article/Review
Volume: 13
Parent Publication: Micromachines
Issue: 11
ISSN: 2072-666X