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Dual-Beam Irradiation Stability of Amorphous Silicon Oxycarbide at 300°C and 500°C (2020)

First Author: Su Q

Attributed to: In-Situ TEM Studies of Ion-Irradiated Materials funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1007/s11837-020-04332-z

Publication URI: https://api.elsevier.com/content/abstract/scopus_id/85090212693

Type: Journal Article/Review

Parent Publication: JOM

Issue: 11