Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes with high immunity to temperature fluctuation (2018)
Attributed to:
Next generation avalanche photodiodes: realising new potentials using nm wide avalanche regions
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1117/12.2326847
Publication URI: https://api.elsevier.com/content/abstract/scopus_id/85055347784
Type: Conference/Paper/Proceeding/Abstract