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Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes with high immunity to temperature fluctuation (2018)

First Author: Ng J

Attributed to: Next generation avalanche photodiodes: realising new potentials using nm wide avalanche regions funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1117/12.2326847

Publication URI: https://api.elsevier.com/content/abstract/scopus_id/85055347784

Type: Conference/Paper/Proceeding/Abstract