Refractive Indices of Ge and Si at Temperatures between 4-296 K in the 4-8 THz Region (2021)

First Author: Naftaly M
Attributed to:  Atomically Deterministic Doping and Readout For Semiconductor Solotronics (ADDRFSS) funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.3390/app11020487

Publication URI: https://api.elsevier.com/content/abstract/scopus_id/85099180167

Type: Journal Article/Review

Parent Publication: Applied Sciences

Issue: 2