Engineering Silicon Oxide by Argon Ion Implantation for High Performance Resistance Switching (2022)
Attributed to:
Resistive switches (RRAM) and memristive behaviour in silicon-rich silicon oxides
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.3389/fmats.2022.813407
Publication URI: https://api.elsevier.com/content/abstract/scopus_id/85132311128
Type: Journal Article/Review
Parent Publication: Frontiers in Materials