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Engineering Silicon Oxide by Argon Ion Implantation for High Performance Resistance Switching (2022)

First Author: Zhao L

Attributed to: Resistive switches (RRAM) and memristive behaviour in silicon-rich silicon oxides funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.3389/fmats.2022.813407

Publication URI: https://api.elsevier.com/content/abstract/scopus_id/85132311128

Type: Journal Article/Review

Parent Publication: Frontiers in Materials