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Strain-balanced GaAs 1-x Bi x /GaN y As 1-y W-type quantum wells for GaAs-based 1.3-1.6 µm lasers (2021)

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/nusod52207.2021.9541434

Publication URI: https://api.elsevier.com/content/abstract/scopus_id/85116328265

Type: Conference/Paper/Proceeding/Abstract

ISSN: 21583234