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Study of individual phonon scattering mechanisms and the validity of Matthiessen's rule in a gate-all-around silicon nanowire transistor (2013)

First Author: Aldegunde M

Attributed to: Quantum Simulations of Future Solid State Transistors funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4772720

Publication URI: https://api.elsevier.com/content/abstract/scopus_id/84872071907

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 1