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Heavily Doped n++ GaN Cap Layer AlN/GaN Metal Oxide Semiconductor High Electron Mobility Transistor (2021)

First Author: Karami K.

Attributed to: Novel GaN Power Devices and Packaging Technologies for 300 degC Ambient Operation funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Publication URI: https://api.elsevier.com/content/abstract/scopus_id/85126130968

Type: Journal Article/Review

Volume: 14

Parent Publication: International Journal of Nanoelectronics and Materials

Issue: Special Issue InCAPE

ISSN: 22321535 19855761