📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! If you would be interested in being interviewed about the improvements we're making and to have your say about how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community, please email gateway@ukri.org.

Low-frequency noise properties of p-type GaAs/AlGaAs heterojunction detectors (2016)

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.infrared.2016.07.018

Publication URI: https://api.elsevier.com/content/abstract/scopus_id/84979529722

Type: Journal Article/Review

Parent Publication: Infrared Physics & Technology