Characterizing Threshold Voltage Shifts and Recovery in Schottky Gate and Ohmic Gate GaN HEMTs (2020)
Attributed to:
Reliability, Condition Monitoring and Health Management Technologies for WBG Power Modules
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/ecce44975.2020.9235650
Publication URI: https://api.elsevier.com/content/abstract/scopus_id/85097189357
Type: Conference/Paper/Proceeding/Abstract