Gate stresses and threshold voltage instability in normally-OFF GaN HEMTs (2020)
Attributed to:
Reliability, Condition Monitoring and Health Management Technologies for WBG Power Modules
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.23919/epe20ecceeurope43536.2020.9215865
Publication URI: https://api.elsevier.com/content/abstract/scopus_id/85094882297
Type: Conference/Paper/Proceeding/Abstract