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Non-Intrusive Methodologies for Characterization of Bias Temperature Instability in SiC Power MOSFETs (2020)

First Author: Gonzalez J

Attributed to: Reliability, Condition Monitoring and Health Management Technologies for WBG Power Modules funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/irps45951.2020.9129637

Publication URI: https://api.elsevier.com/content/abstract/scopus_id/85088385616

Type: Conference/Paper/Proceeding/Abstract