Influence of Emitter Side Design on the Unintentional Turn-on of 10kV+ SiC n-IGBTs (2022)

First Author: Almpanis I
Attributed to:  Underpinning Power Electronics switch optimisation Theme funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ecce50734.2022.9947492

Publication URI: https://api.elsevier.com/content/abstract/scopus_id/85144088895

Type: Conference/Paper/Proceeding/Abstract