Comparison of a 3.3 kV SiC Hybrid-Channel Trench MOSFET and a Planar MOSFET (2022)

First Author: Zhang L
Attributed to:  Underpinning Power Electronics switch optimisation Theme funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/wipdaeurope55971.2022.9936559

Publication URI: https://api.elsevier.com/content/abstract/scopus_id/85142491978

Type: Conference/Paper/Proceeding/Abstract