Engineering the Schottky Interface of 3.3 kV SiC JBS Diodes Using a P<sub>2</sub>O<sub>5</sub> Surface Passivation Treatment (2022)

First Author: Renz A
Attributed to:  Underpinning Power Electronics switch optimisation Theme funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.4028/p-97jy4p

Publication URI: https://api.elsevier.com/content/abstract/scopus_id/85134267403

Type: Journal Article/Review

Parent Publication: Materials Science Forum