(Invited, Digital Presentation) Improved Reliability of 4H-SiC Metal-Oxide-Semiconductor Devices Utilising Atomic Layer Deposited Layers with Enhanced Interface Quality (2022)

First Author: Renz A
Attributed to:  Underpinning Power Electronics switch optimisation Theme funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1149/10802.0043ecst

Publication URI: https://api.elsevier.com/content/abstract/scopus_id/85132363055

Type: Journal Article/Review

Parent Publication: ECS Transactions

Issue: 2