3.3 kV SiC JBS diodes employing a P 2 O 5 surface passivation treatment to improve electrical characteristics (2021)
Attributed to:
Underpinning Power Electronics switch optimisation Theme
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/ecce47101.2021.9594999
Publication URI: https://api.elsevier.com/content/abstract/scopus_id/85123355790
Type: Conference/Paper/Proceeding/Abstract