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Dynamic Gate Breakdown of p-Gate GaN HEMTs in Inductive Power Switching (2023)

First Author: Wang B

Attributed to: ECCS-EPSRC: Nitride Super-Junction HEMTs for Robust, Efficient, Fast Power Switching funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/led.2022.3227091

Publication URI: https://api.elsevier.com/content/abstract/scopus_id/85148240274

Type: Journal Article/Review

Parent Publication: IEEE Electron Device Letters

Issue: 2