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A novel depletion mode p-GaN island HEMT and its use in a monolithically integrated start-up circuit (2022)

First Author: Efthymiou L

Attributed to: ECCS-EPSRC: Nitride Super-Junction HEMTs for Robust, Efficient, Fast Power Switching funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/essderc55479.2022.9947100

Publication URI: https://api.elsevier.com/content/abstract/scopus_id/85142751542

Type: Conference/Paper/Proceeding/Abstract