On the Challenges of Reliable Threshold Voltage Measurement in Ohmic and Schottky Gate p-GaN HEMTs (2021)
Attributed to:
ECCS-EPSRC: Nitride Super-Junction HEMTs for Robust, Efficient, Fast Power Switching
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/jeds.2021.3111809
Publication URI: https://api.elsevier.com/content/abstract/scopus_id/85114714401
Type: Journal Article/Review
Parent Publication: IEEE Journal of the Electron Devices Society