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Structural, electronic, and optical properties of m -plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory (2015)

First Author: Schulz S

Attributed to: Study of semi-polar and non-polar nitride based structures for opto-electronic device applications funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1103/physrevb.92.235419

Publication URI: http://dx.doi.org/10.1103/physrevb.92.235419

Type: Journal Article/Review

Parent Publication: Physical Review B

Issue: 23