📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! If you would be interested in being interviewed about the improvements we're making and to have your say about how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community, please email gateway@ukri.org.

Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells (2013)

First Author: Massabuau F

Attributed to: Study of semi-polar and non-polar nitride based structures for opto-electronic device applications funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4792505

Publication URI: http://dx.doi.org/10.1063/1.4792505

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 7