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Unintentional doping in GaN. (2012)

First Author: Zhu T

Attributed to: Study of semi-polar and non-polar nitride based structures for opto-electronic device applications funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1039/c2cp40998d

PubMed Identifier: 22684337

Publication URI: http://europepmc.org/abstract/MED/22684337

Type: Journal Article/Review

Volume: 14

Parent Publication: Physical chemistry chemical physics : PCCP

Issue: 27

ISSN: 1463-9076