A Study of High Resistivity Semi-Insulating 4H-SiC Epilayers Formed via the Implantation of Germanium and Vanadium (2022)
Attributed to:
Ultra-high voltage (>30KV) power devices through superior materials for HVDC transmission
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.4028/p-92w3k6
Publication URI: http://dx.doi.org/10.4028/p-92w3k6
Type: Journal Article/Review
Parent Publication: Materials Science Forum