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Engineering the Schottky Interface of 3.3 kV SiC JBS Diodes Using a P<sub>2</sub>O<sub>5</sub> Surface Passivation Treatment (2022)

First Author: Renz A

Attributed to: Ultra-high voltage (>30KV) power devices through superior materials for HVDC transmission funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.4028/p-97jy4p

Publication URI: http://dx.doi.org/10.4028/p-97jy4p

Type: Journal Article/Review

Parent Publication: Materials Science Forum