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3.3 kV SiC JBS diodes employing a P 2 O 5 surface passivation treatment to improve electrical characteristics (2021)

First Author: Renz A

Attributed to: Ultra-high voltage (>30KV) power devices through superior materials for HVDC transmission funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ecce47101.2021.9594999

Publication URI: http://dx.doi.org/10.1109/ecce47101.2021.9594999

Type: Conference/Paper/Proceeding/Abstract