Switching kinetics of SiC resistive memory for harsh environments (2015)

First Author: Morgan K
Attributed to:  Spintronic device physics in Si/Ge Heterostructures funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4926674

Publication URI: http://dx.doi.org/10.1063/1.4926674

Type: Journal Article/Review

Parent Publication: AIP Advances

Issue: 7