Overcoming the compensation of acceptors in GaN:Mg by defect complex formation (2023)
Attributed to:
HIGH END COMPUTING MATERIALS CHEMISTRY CONSORTIUM
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/5.0148858
Publication URI: http://dx.doi.org/10.1063/5.0148858
Type: Journal Article/Review
Parent Publication: APL Materials
Issue: 8