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Robust sub-100 nm T-Gate fabrication process using multi-step development (2023)

First Author: Karami K

Attributed to: Novel GaN Power Devices and Packaging Technologies for 300 degC Ambient Operation funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.mne.2023.100211

Publication URI: http://dx.doi.org/10.1016/j.mne.2023.100211

Type: Journal Article/Review

Parent Publication: Micro and Nano Engineering