The growth of low-threading-dislocation-density GaAs buffer layers on Si substrates (2023)

First Author: Dang M
Attributed to:  Future Compound Semiconductor Manufacturing Hub funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1361-6463/ace36d

Publication URI: http://dx.doi.org/10.1088/1361-6463/ace36d

Type: Journal Article/Review

Parent Publication: Journal of Physics D: Applied Physics

Issue: 40