Dislocation and strain mapping in metamorphic parabolic-graded InGaAs buffers on GaAs. (2023)

First Author: Stephen N
Attributed to:  SuperSTEM: National Research Facility for Advanced Electron Microscopy funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1007/s10853-023-08597-y

PubMed Identifier: 37323808

Publication URI: http://europepmc.org/abstract/MED/37323808

Type: Journal Article/Review

Volume: 58

Parent Publication: Journal of materials science

Issue: 23

ISSN: 0022-2461