A microscopic mechanism of dielectric breakdown in SiO2 films: An insight from multi-scale modeling (2017)

First Author: Padovani A
Attributed to:  Resistive switches (RRAM) and memristive behaviour in silicon-rich silicon oxides funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4979915

Publication URI: http://dx.doi.org/10.1063/1.4979915

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 15