Compositional Mapping of the AlGaN Alloy Composition in Graded Buffer Structures Using Cathodoluminescence (2023)

First Author: Loeto K
Attributed to:  Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssa.202200830

Publication URI: http://dx.doi.org/10.1002/pssa.202200830

Type: Journal Article/Review

Parent Publication: physica status solidi (a)

Issue: 16