Evidence of Improved Thermal Stability via Nanoscale Contact Engineering in IGZO Source-Gated Thin-Film Transistors (2023)
Attributed to:
The Physics and Engineering of Oxide Semiconductors for Large-Area CMOS
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/ted.2023.3276337
Publication URI: http://dx.doi.org/10.1109/ted.2023.3276337
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Electron Devices
Issue: 7