Evidence of Improved Thermal Stability via Nanoscale Contact Engineering in IGZO Source-Gated Thin-Film Transistors (2023)

First Author: Alfarisyi S
Attributed to:  The Physics and Engineering of Oxide Semiconductors for Large-Area CMOS funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2023.3276337

Publication URI: http://dx.doi.org/10.1109/ted.2023.3276337

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 7