High gain complementary inverters based on comparably-sized IGZO and DNTT source-gated transistors (2023)
Attributed to:
A new low-complexity paradigm for analogue computation and hardware learning
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1039/d3tc02474a
Publication URI: http://dx.doi.org/10.1039/d3tc02474a
Type: Journal Article/Review
Parent Publication: Journal of Materials Chemistry C
Issue: 34