High gain complementary inverters based on comparably-sized IGZO and DNTT source-gated transistors (2023)

First Author: Bestelink E

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1039/d3tc02474a

Publication URI: http://dx.doi.org/10.1039/d3tc02474a

Type: Journal Article/Review

Parent Publication: Journal of Materials Chemistry C

Issue: 34