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Lateral Tunnel Epitaxy of GaAs in Lithographically Defined Cavities on 220 nm Silicon-on-Insulator. (2023)

First Author: Yan Z

Attributed to: Tunnel epitaxy: building a buffer-less III-V-on-insulator (XOI) platform for on-chip light sources funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1021/acs.cgd.3c00633

PubMed Identifier: 37937193

Publication URI: http://europepmc.org/abstract/MED/37937193

Type: Journal Article/Review

Volume: 23

Parent Publication: Crystal growth & design

Issue: 11

ISSN: 1528-7483