Self-Assembled Au Nanoelectrodes: Enabling Low-Threshold-Voltage HfO 2 -Based Artificial Neurons (2023)
Attributed to:
ECCS - EPSRC Development of uniform, low power, high density resistive memory by vertical interface and defect design
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1021/acs.nanolett.3c02217
PubMed Identifier: 37875263
Publication URI: http://europepmc.org/abstract/MED/37875263
Type: Journal Article/Review
Parent Publication: Nano Letters
Issue: 21
ISSN: 1530-6984