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Subthreshold Current Suppression in ReS2 Nanosheet-Based Field-Effect Transistors at High Temperatures. (2023)

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1021/acsanm.3c03685

PubMed Identifier: 38093806

Publication URI: http://europepmc.org/abstract/MED/38093806

Type: Journal Article/Review

Volume: 6

Parent Publication: ACS applied nano materials

Issue: 23

ISSN: 2574-0970