Promoting Low-Voltage Saturation in High-Performance a-InGaZnO Source-Gated Transistors (2024)
Attributed to:
A new low-complexity paradigm for analogue computation and hardware learning
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/ted.2023.3331668
Publication URI: http://dx.doi.org/10.1109/ted.2023.3331668
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Electron Devices
Issue: 1