Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped Buffer (2017)
Attributed to:
Silicon Compatible GaN Power Electronics
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/ted.2017.2757516
Publication URI: http://dx.doi.org/10.1109/ted.2017.2757516
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Electron Devices
Issue: 12