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Importance of As and Ga Balance in Achieving Long GaAs Nanowires by Selective Area Epitaxy (2023)

First Author: Chereau E

Attributed to: Manufacturing of nano-engineered III-N semiconductors: Equipment Business Case funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1021/acs.cgd.3c00172

Publication URI: http://dx.doi.org/10.1021/acs.cgd.3c00172

Type: Journal Article/Review

Parent Publication: Crystal Growth & Design

Issue: 6