Two-dimensional a-In2Se3 field effect transistor for wide-band photodetection and non-volatile memory (2023)

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.jpcs.2023.111653

Publication URI: http://dx.doi.org/10.1016/j.jpcs.2023.111653

Type: Journal Article/Review

Parent Publication: Journal of Physics and Chemistry of Solids

ISSN: 0022-3697