Scanning capacitance microscopy of GaN-based high electron mobility transistor structures: A practical guide. (2023)
Attributed to:
Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.ultramic.2023.113833
PubMed Identifier: 37666104
Publication URI: http://europepmc.org/abstract/MED/37666104
Type: Journal Article/Review
Volume: 254
Parent Publication: Ultramicroscopy
ISSN: 0304-3991