Porous pseudo-substrates for InGaN quantum well growth: Morphology, structure, and strain relaxation (2023)

First Author: Ji Y
Attributed to:  Sir Henry Royce InsStitute - recurrent grant funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/5.0165066

Publication URI: http://dx.doi.org/10.1063/5.0165066

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 14

ISSN: 0021-8979