Porous pseudo-substrates for InGaN quantum well growth: Morphology, structure, and strain relaxation (2023)
Attributed to:
Sir Henry Royce InsStitute - recurrent grant
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/5.0165066
Publication URI: http://dx.doi.org/10.1063/5.0165066
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 14
ISSN: 0021-8979